Infineon Technologies - FS75R12KE3B9BDLA1

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FS75R12KE3B9BDLA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS75R12KE3B9BDLA1
Description N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; JESD-30 Code: R-XUFM-X26; Package Shape: RECTANGULAR;
Datasheet FS75R12KE3B9BDLA1 Datasheet
In Stock305
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 105 A
Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 610 ns
No. of Terminals: 26
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 340 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X26
No. of Elements: 6
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Reference Standard: UL RECOGNIZED
Case Connection: ISOLATED
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