Infineon Technologies - FS900R08A2P2B31BOSA1

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FS900R08A2P2B31BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FS900R08A2P2B31BOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 1546 W; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 750 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Case Connection: ISOLATED;
Datasheet FS900R08A2P2B31BOSA1 Datasheet
In Stock70
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 820 ns
Maximum Power Dissipation (Abs): 1546 W
Maximum Collector-Emitter Voltage: 750 V
Nominal Turn On Time (ton): 500 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 6.5 V
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