Infineon Technologies - FT150R12KE3-B4

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FT150R12KE3-B4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FT150R12KE3-B4
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 700 W; Maximum Collector Current (IC): 200 A; Maximum VCEsat: 2.15 V; Maximum Operating Temperature: 125 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet FT150R12KE3-B4 Datasheet
In Stock714
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 700 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 3
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.15 V
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