Infineon Technologies - FZ1200R17KF6B2

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FZ1200R17KF6B2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1200R17KF6B2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1200 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 1700 V; Maximum VCEsat: 3.1 V;
Datasheet FZ1200R17KF6B2 Datasheet
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NAME DESCRIPTION
Maximum Collector Current (IC): 1200 A
Maximum Power Dissipation (Abs): 9600 W
Maximum Collector-Emitter Voltage: 1700 V
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.1 V
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