Infineon Technologies - FZ1200R17KF6CB2NOSA1

FZ1200R17KF6CB2NOSA1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	FZ1200R17KF6CB2NOSA1
Description	N-Channel; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1950 A; Maximum VCEsat: 3.1 V; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet	FZ1200R17KF6CB2NOSA1 Datasheet
In Stock	54

FZ1200R17KF6CB2NOSA1 Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	1950 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Polarity or Channel Type:	N-Channel
Minimum Operating Temperature:	-40 Cel
Nominal Turn Off Time (toff):	1240 ns
Maximum Power Dissipation (Abs):	9600 W
Maximum Collector-Emitter Voltage:	1700 V
Nominal Turn On Time (ton):	460 ns
Maximum Operating Temperature:	125 Cel
Maximum Gate-Emitter Voltage:	20 V
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	3.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
54	-	-

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