Infineon Technologies - FZ1200R33KF2C-B5

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FZ1200R33KF2C-B5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1200R33KF2C-B5
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 14500 W; Maximum Collector Current (IC): 2000 A; Maximum Collector-Emitter Voltage: 3300 V; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 5 V;
Datasheet FZ1200R33KF2C-B5 Datasheet
In Stock950
NAME DESCRIPTION
Maximum Collector Current (IC): 2000 A
Maximum Power Dissipation (Abs): 14500 W
Maximum Collector-Emitter Voltage: 3300 V
No. of Elements: 3
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 5 V
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