Infineon Technologies - FZ1200R33KL2

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FZ1200R33KL2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1200R33KL2
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 14700 W; Maximum Collector Current (IC): 2300 A; Maximum VCEsat: 3.65 V; Maximum Collector-Emitter Voltage: 3300 V; Maximum Operating Temperature: 125 Cel;
Datasheet FZ1200R33KL2 Datasheet
In Stock572
NAME DESCRIPTION
Maximum Collector Current (IC): 2300 A
Maximum Power Dissipation (Abs): 14700 W
Maximum Collector-Emitter Voltage: 3300 V
No. of Elements: 3
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3.65 V
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