Infineon Technologies - FZ1500R33HE3B60BPSA1

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FZ1500R33HE3B60BPSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1500R33HE3B60BPSA1
Description N-Channel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Nominal Turn Off Time (toff): 3550 ns; Transistor Element Material: SILICON; Case Connection: ISOLATED;
Datasheet FZ1500R33HE3B60BPSA1 Datasheet
In Stock975
NAME DESCRIPTION
Other Names: 448-FZ1500R33HE3B60BPSA1
SP001617634
Nominal Turn Off Time (toff): 3550 ns
Maximum Collector-Emitter Voltage: 3300 V
Nominal Turn On Time (ton): 1150 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 3.1 V
Minimum Operating Temperature: -40 Cel
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