Infineon Technologies - FZ1600R17HP4B2BOSA2

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FZ1600R17HP4B2BOSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1600R17HP4B2BOSA2
Description N-Channel; Maximum Power Dissipation (Abs): 10500 W; Maximum VCEsat: 2.25 V; Nominal Turn Off Time (toff): 1710 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 805 ns;
Datasheet FZ1600R17HP4B2BOSA2 Datasheet
In Stock491
NAME DESCRIPTION
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1710 ns
Maximum Power Dissipation (Abs): 10500 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 805 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.25 V
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
491 $851.990 $418,327.090

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