Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | FZ1600R17KF6CB2NOSA1 |
| Description | N-Channel; Maximum Power Dissipation (Abs): 12500 W; Maximum Collector Current (IC): 2600 A; Minimum Operating Temperature: -40 Cel; Maximum Collector-Emitter Voltage: 1700 V; Peak Reflow Temperature (C): NOT SPECIFIED; |
| Datasheet | FZ1600R17KF6CB2NOSA1 Datasheet |
| In Stock | 428 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
SP000100578 FZ1600R17KF6C_B2 |
| Maximum Collector Current (IC): | 2600 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Transistor Element Material: | SILICON |
| Maximum Gate-Emitter Threshold Voltage: | 6.5 V |
| Polarity or Channel Type: | N-Channel |
| Minimum Operating Temperature: | -40 Cel |
| Nominal Turn Off Time (toff): | 1360 ns |
| Maximum Power Dissipation (Abs): | 12500 W |
| Maximum Collector-Emitter Voltage: | 1700 V |
| Nominal Turn On Time (ton): | 490 ns |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Case Connection: | ISOLATED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 3.1 V |









