Infineon Technologies - FZ1800R17HP4B29BOSA2

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FZ1800R17HP4B29BOSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ1800R17HP4B29BOSA2
Description N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2.25 V;
Datasheet FZ1800R17HP4B29BOSA2 Datasheet
In Stock567
NAME DESCRIPTION
Other Names: 2156-FZ1800R17HP4B29BOSA2
SP001052012
FZ1800R17HP4B29
INFINFFZ1800R17HP4B29BOSA2
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 1860 ns
Maximum Power Dissipation (Abs): 11500 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 880 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.25 V
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
567 $1,449.050 $821,611.350

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