Infineon Technologies - FZ2400R17HP4B28BOSA1

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FZ2400R17HP4B28BOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ2400R17HP4B28BOSA1
Description N-Channel; Maximum Power Dissipation (Abs): 19000 W; Transistor Element Material: SILICON; Maximum Gate-Emitter Voltage: 20 V; Minimum Operating Temperature: -40 Cel; Nominal Turn On Time (ton): 710 ns;
Datasheet FZ2400R17HP4B28BOSA1 Datasheet
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NAME DESCRIPTION
Nominal Turn Off Time (toff): 1800 ns
Maximum Power Dissipation (Abs): 19000 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 710 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.25 V
Minimum Operating Temperature: -40 Cel
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