Infineon Technologies - FZ3600R17HP4B2BOSA2

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FZ3600R17HP4B2BOSA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number FZ3600R17HP4B2BOSA2
Description N-Channel; Maximum Power Dissipation (Abs): 19500 W; Nominal Turn Off Time (toff): 2095 ns; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum VCEsat: 2.25 V; Maximum Operating Temperature: 150 Cel;
Datasheet FZ3600R17HP4B2BOSA2 Datasheet
In Stock387
NAME DESCRIPTION
Other Names: FZ3600R17HP4B2
448-FZ3600R17HP4B2BOSA2
FZ3600R17HP4B2BOSA2-ND
SP001052028
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 2095 ns
Maximum Power Dissipation (Abs): 19500 W
Maximum Collector-Emitter Voltage: 1700 V
Nominal Turn On Time (ton): 945 ns
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.25 V
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
387 $1,530.000 $592,110.000

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