Infineon Technologies - GA200NS61U

  1. Home
  2. Infineon Technologies - GA200NS61U
GA200NS61U by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number GA200NS61U
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 200 A; Maximum Collector-Emitter Voltage: 600 V; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V;
Datasheet GA200NS61U Datasheet
In Stock588
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 625 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.2 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
588 - -

Popular Products

Category Top Products

FP25R12W2T4PBPSA1 by Infineon Technologies

FP25R12W2T4PBPSA1

Infineon Technologies

FP25R12W2T4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 39A. It is used for power control applications due to its complex configuration and nominal turn off time of 685ns. The transistor's package style is flange mount with a rectangular shape and isolated case connection.
F3L150R07W2E3B11BOMA1 by Infineon Technologies

F3L150R07W2E3B11BOMA1

Infineon Technologies

Infineon's F3L150R07W2E3B11BOMA1 IGBT features N-CHANNEL polarity, 650V VCEmax, and 150A IC. Ideal for power control applications with a max operating temp of 150°C. Complex configuration with 4 elements, 480ns toff, and 155ns ton for efficient power management.
IRGP50B60PDPBF by Infineon Technologies

IRGP50B60PDPBF

Infineon Technologies

IRGP50B60PDPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 370W power dissipation, and 75A max collector current. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package shape. Operating at up to 150°C, it offers fast rise time of 36ns and fall time of 65ns.
2MBI300U2B-060-50 by Fuji Electric

2MBI300U2B-060-50

Fuji Electric

Fuji Electric's 2MBI300U2B-060-50 IGBT features N-CHANNEL polarity, SERIES CONNECTED configuration with 2 elements & built-in diode. Ideal for POWER CONTROL applications with max VCEsat of 2.45V and IC of 300A. Operates at up to 150°C, offering fast turn-off time (toff) of 480ns and turn-on time (ton) of 400ns.
IRG4BC30W-SPBF by International Rectifier

IRG4BC30W-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;
HGTG20N60A4D by Onsemi

HGTG20N60A4D

Onsemi

HGTG20N60A4D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 28ns ton. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 150°C in a RECTANGULAR package style.
IKY40N120CS6XKSA1 by Infineon Technologies

IKY40N120CS6XKSA1

Infineon Technologies

IKY40N120CS6XKSA1 by Infineon: N-Channel IGBT with VCEsat of 2.15V, IC of 80A, and Pdiss of 500W. Ideal for high-power applications like motor drives and renewable energy systems due to its high voltage rating and fast switching times.
SKM200GB12E4 by Semikron International

SKM200GB12E4

Semikron International

SKM200GB12E4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 2.05V, IC of 313A, and toff of 597ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 175°C with a VCEmax of 1200V.
7MBR50VB120-50 by Fuji Electric

7MBR50VB120-50

Fuji Electric

Fuji Electric's 7MBR50VB120-50 IGBT features N-CHANNEL polarity, 1200V VCEsat, and 50A IC. Ideal for power control applications with a max operating temperature of 175°C.
IRGP35B60PDPBF by International Rectifier

IRGP35B60PDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
IXGA20N120A3-TRL by IXYS Corporation

IXGA20N120A3-TRL

IXYS Corporation

IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.
IXGH10N170A by Littelfuse

IXGH10N170A

Littelfuse

IXGH10N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 10A max collector current, and 240ns nominal turn off time. Ideal for motor control applications due to its single configuration and through-hole terminal form.
APT200GN60JDQ4 by Microchip Technology

APT200GN60JDQ4

Microchip Technology

Microchip Technology's APT200GN60JDQ4 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 283A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 660ns turn off time, and 130ns turn on time. Package style is flange mount with plastic/epoxy body material.
FGA25N120ANTDTU_NL by Fairchild Semiconductor

FGA25N120ANTDTU_NL

Fairchild Semiconductor

FGA25N120ANTDTU_NL by Fairchild Semiconductor is an N-CHANNEL IGBT with tr of 90 ns, tf of 180 ns, and Abs Pd of 312 W. It operates at a max Vce of 1200 V and can handle a max IC of 25 A. Ideal for high-power applications requiring fast switching speeds and high voltage capabilities.
IKQ120N60TXKSA1 by Infineon Technologies

IKQ120N60TXKSA1

Infineon Technologies

IKQ120N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It has a Nominal Turn On Time of 84ns and Nominal Turn Off Time of 398ns, making it ideal for POWER CONTROL applications.
APT35GT120JU2 by Advanced Power Technology

APT35GT120JU2

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Additional Features: LOW CONDUCTION LOSS; Case Connection: ISOLATED;
IKB40N65EH5ATMA1 by Infineon Technologies

IKB40N65EH5ATMA1

Infineon Technologies

IKB40N65EH5ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 74A. It is designed for power control applications, featuring a built-in diode, small outline package style, and operating temperature range from -40 to 175 °C.
IRG4PC30UDPBF by International Rectifier

IRG4PC30UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Nominal Turn Off Time (toff): 300 ns;
IXLF19N250A by IXYS Corporation

IXLF19N250A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 19 A; Nominal Turn On Time (ton): 150 ns;
IXXX200N60C3 by IXYS Corporation

IXXX200N60C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 340 A; Terminal Finish: Matte Tin (Sn);