Infineon Technologies - GA200SA60UP

  1. Home
  2. Infineon Technologies - GA200SA60UP
GA200SA60UP by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number GA200SA60UP
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 200 A; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V; No. of Elements: 1;
Datasheet GA200SA60UP Datasheet
In Stock86,166
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 500 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 1.9 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
86,166 - -

Popular Products

Category Top Products

BSM150GB120DLC by Eupec & Kg

BSM150GB120DLC

Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 300 A; Maximum Operating Temperature: 125 Cel;
IKW40N120CS6XKSA1 by Infineon Technologies

IKW40N120CS6XKSA1

Infineon Technologies

IKW40N120CS6XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 2.15V VCEsat. Ideal for POWER CONTROL applications due to its 500W power dissipation, -40 to 175°C operating temp range, and fast switching times of 65ns (ton) and 445ns (toff).
FF450R12ME4EB11BPSA1 by Infineon Technologies

FF450R12ME4EB11BPSA1

Infineon Technologies

FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
FZ600R17KE3S4HOSA1 by Infineon Technologies

FZ600R17KE3S4HOSA1

Infineon Technologies

Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
ISL9V3040D3ST by Fairchild Semiconductor

ISL9V3040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): SMALL OUTLINE;
IXA60IF1200NA by Littelfuse

IXA60IF1200NA

Littelfuse

IXA60IF1200NA by Littelfuse is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 88A, and toff of 350ns. Ideal for POWER CONTROL applications due to its high power dissipation (290W), operating temperature range (-40 to 125°C), and collector-emitter voltage of 1200V.
IKW25N120H3FKSA1 by Infineon Technologies

IKW25N120H3FKSA1

Infineon Technologies

IKW25N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 397ns toff. Ideal for power control applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
FGH40T120SMDL4 by Fairchild Semiconductor

FGH40T120SMDL4

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; JESD-30 Code: R-PSFM-T4;
IXLF19N250A by Littelfuse

IXLF19N250A

Littelfuse

IXLF19N250A by Littelfuse is an N-CHANNEL IGBT with 2500V VCE, 19A IC, and 150W Ptot. Ideal for power control applications, it has a turn-off time of 850ns and operates up to 150°C. Recognized by UL, this transistor is in a rectangular package with through-hole terminals.
MMIX4B22N300 by IXYS Corporation

MMIX4B22N300

IXYS Corporation

MMIX4B22N300 by IXYS Corporation is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector-emitter voltage of 3000V. It is used for power control applications and has a small outline package style, making it suitable for surface mount installations.
IRG4BC40UPBF by Infineon Technologies

IRG4BC40UPBF

Infineon Technologies

IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
APT200GN60J by Microsemi

APT200GN60J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;
2MBI100VA-060-50 by Fuji Electric

2MBI100VA-060-50

Fuji Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Terminals: 7; Maximum Gate-Emitter Voltage: 20 V;
IRG4PC50F-EPBF by Infineon Technologies

IRG4PC50F-EPBF

Infineon Technologies

IRG4PC50F-EPBF by Infineon is an N-CHANNEL IGBT transistor with 70A IC, 600V VCE, and 200W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 620ns and low fall time of 190ns. The package style is FLANGE MOUNT with a max operating temperature of 150°C.
IGP15N60TXKSA1 by Infineon Technologies

IGP15N60TXKSA1

Infineon Technologies

Infineon's IGP15N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 30A max collector current. It has a turn-off time of 291ns and turn-on time of 32ns, making it ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals and can operate at temperatures up to 175°C.
IXA70I1200NA by Littelfuse

IXA70I1200NA

Littelfuse

IXA70I1200NA by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 100A IC, and 350W power dissipation. Ideal for power control applications, it features a fast turn-off time of 350ns and operates b/w -40 to 150°C.
NGTB50N120FL2WG by Onsemi

NGTB50N120FL2WG

Onsemi

NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
IRG4BC30KPBF by International Rectifier

IRG4BC30KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 28 A; Case Connection: COLLECTOR;
IRG7PH42U-EP by International Rectifier

IRG7PH42U-EP

International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Terminal Finish: MATTE TIN OVER NICKEL;
APT60GA60JD60 by Microsemi

APT60GA60JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 112 A; Package Shape: RECTANGULAR; Nominal Turn On Time (ton): 82 ns;