Infineon Technologies - GB15RF60K

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GB15RF60K by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number GB15RF60K
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 25 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 600 V;
Datasheet GB15RF60K Datasheet
In Stock41,200
NAME DESCRIPTION
Maximum Collector Current (IC): 25 A
Maximum Power Dissipation (Abs): 100 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
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