Infineon Technologies - GTVA126001ECV1R2

GTVA126001ECV1R2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number GTVA126001ECV1R2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; JESD-30 Code: R-CDFM-F2; Transistor Element Material: GALLIUM NITRIDE;
Datasheet GTVA126001ECV1R2 Datasheet
In Stock306
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 150 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: L BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
306 - -

Popular Products

Category Top Products