GTVA261701FAV1R2XTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	GTVA261701FAV1R2XTMA1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Case Connection: SOURCE; Terminal Position: DUAL;
Datasheet	GTVA261701FAV1R2XTMA1 Datasheet
In Stock	224

NAME	DESCRIPTION
Minimum Power Gain (Gp):	16 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM NITRIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	7.5 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	150 V
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-CDFP-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	225 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
224	-	-

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