Infineon Technologies - IAUA180N04S5N012

IAUA180N04S5N012 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IAUA180N04S5N012
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; Maximum Feedback Capacitance (Crss): 84 pF;
Datasheet IAUA180N04S5N012 Datasheet
In Stock806
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 720 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 5
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 175 mJ
Maximum Feedback Capacitance (Crss): 84 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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