Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IAUS300N08S5N012ATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Minimum DS Breakdown Voltage: 80 V; Reference Standard: AEC-Q101; IEC-68-1; |
| Datasheet | IAUS300N08S5N012ATMA1 Datasheet |
| In Stock | 14,136 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 300 A |
| Maximum Pulsed Drain Current (IDM): | 1200 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 375 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0012 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 817 mJ |
| Other Names: |
IAUS300N08S5N012ATMA1TR IAUS300N08S5N012ATMA1DKR IAUS300N08S5N012ATMA1CT SP001643336 IFEINFIAUS300N08S5N012ATMA1 2156-IAUS300N08S5N012ATMA1 |
| Maximum Feedback Capacitance (Crss): | 130 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 80 V |
| Additional Features: | ULTRA LOW RESISTANCE |
| Reference Standard: | AEC-Q101; IEC-68-1 |
| Maximum Drain Current (Abs) (ID): | 300 A |
