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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IAUT300N08S5N014ATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSSO-F8; |
| Datasheet | IAUT300N08S5N014ATMA1 Datasheet |
| In Stock | 33,835 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 300 A |
| Maximum Pulsed Drain Current (IDM): | 1200 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 300 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0014 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 600 mJ |
| Other Names: |
IAUT300N08S5N014ATMA1TR IAUT300N08S5N014ATMA1DKR IFEINFIAUT300N08S5N014ATMA1 2156-IAUT300N08S5N014ATMA1 IAUT300N08S5N014DKR IAUT300N08S5N014ATMA1CT IAUT300N08S5N014CT IAUT300N08S5N014DKR-ND SP001688336 IAUT300N08S5N014 IAUT300N08S5N014TR IAUT300N08S5N014CT-ND IAUT300N08S5N014TR-ND |
| Maximum Feedback Capacitance (Crss): | 106 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 80 V |
| Reference Standard: | AEC-Q101 |
