Infineon Technologies - IFF2400P17LE4

  1. Home
  2. Infineon Technologies - IFF2400P17LE4
IFF2400P17LE4 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IFF2400P17LE4
Description N-Channel; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1700 V; Minimum Operating Temperature: -40 Cel; Case Connection: ISOLATED; Transistor Element Material: SILICON;
Datasheet IFF2400P17LE4 Datasheet
In Stock411
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1700 V
Transistor Element Material: SILICON
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.3 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
411 - -

Popular Products

Category Top Products

SKM150GB12T4G by Semikron International

SKM150GB12T4G

Semikron International

SKM150GB12T4G by Semikron: N-CHANNEL IGBT with 2 elements, VCEsat of 2.1V, IC of 220A. Ideal for power control applications due to its high voltage rating of 1200V and max operating temperature of 175°C. Recognized by UL, it features a flange mount package style for easy installation.
APT65GP60JDQ2 by Advanced Power Technology

APT65GP60JDQ2

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
IRGR4045DPBF by International Rectifier

IRGR4045DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: POWER CONTROL;
STGD6NC60HDT4 by STMicroelectronics

STGD6NC60HDT4

STMicroelectronics

STGD6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration.
FP35R12KT4BOSA1 by Infineon Technologies

FP35R12KT4BOSA1

Infineon Technologies

FP35R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn-off time of 620ns. It is used in applications requiring high power switching capabilities at up to 150°C operating temperature. The transistor's silicon material and complex configuration make it suitable for various industrial uses.
IRG7PH42UD1-EP by Infineon Technologies

IRG7PH42UD1-EP

Infineon Technologies

IRG7PH42UD1-EP by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 1200V. It has a max power dissipation of 313W and is designed for power control applications. The transistor has a rectangular package shape and a through-hole terminal form.
IKW75N65ES5XKSA1 by Infineon Technologies

IKW75N65ES5XKSA1

Infineon Technologies

IKW75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 233ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Features THROUGH-HOLE terminals in a RECTANGULAR package style.
FF400R12KE3HOSA1 by Infineon Technologies

FF400R12KE3HOSA1

Infineon Technologies

FF400R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 760 ns turn off time, and a max voltage of 1200 V. It is commonly used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its high current rating of 580 A and fast turn on/off times.
IXGH6N170 by Littelfuse

IXGH6N170

Littelfuse

IXGH6N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 12A max collector current, and 75W max power dissipation. Ideal for motor control applications due to its single configuration and 600ns nominal turn off time.
STGB20N45LZAG by STMicroelectronics

STGB20N45LZAG

STMicroelectronics

STGB20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 1.25V and a max collector-emitter voltage of 475V. It is designed for automotive ignition applications, has a small outline package style, and can operate at temperatures up to 175°C.
IXYN100N120C3 by IXYS Corporation

IXYN100N120C3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 152 A; Nominal Turn Off Time (toff): 265 ns;
FGB20N60SFD-F085 by Onsemi

FGB20N60SFD-F085

Onsemi

FGB20N60SFD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Ptot. Ideal for power control applications due to its fast tr of 21ns and tf of 43ns. AEC-Q101 certified for automotive use, it features a small outline package style.
IXYX40N450HV by IXYS Corporation

IXYX40N450HV

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 660 W; Maximum Collector Current (IC): 95 A; No. of Elements: 1;
NGTB15N120LWG by Onsemi

NGTB15N120LWG

Onsemi

NGTB15N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 229W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 435ns.
SGP10N60RUFDTU by Onsemi

SGP10N60RUFDTU

Onsemi

SGP10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 75W Pd. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Features fast switching times: ton of 49ns and tf of 220ns.
FF650R17IE4PBOSA1 by Infineon Technologies

FF650R17IE4PBOSA1

Infineon Technologies

FF650R17IE4PBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max VCE of 1700V and toff of 1870ns, making it ideal for power control applications. This UL APPROVED transistor operates from -40°C with a ton of 720ns in a FLANGE MOUNT package style.
HGTG40N60C3 by Intersil

HGTG40N60C3

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 435 ns; Transistor Element Material: SILICON;
IKD06N60RFATMA1 by Infineon Technologies

IKD06N60RFATMA1

Infineon Technologies

IKD06N60RFATMA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 12A IC, and 100W power dissipation. It operates up to 175°C making it suitable for high-power applications in industries like automotive and renewable energy.
FS215R04A1E3DBOMA1 by Infineon Technologies

FS215R04A1E3DBOMA1

Infineon Technologies

Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
STGWA40M120DF3 by STMicroelectronics

STGWA40M120DF3

STMicroelectronics

STGWA40M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with a max power dissipation of 468W. It operates at a max temperature of 175°C and has a collector-emitter voltage of 1200V. It is commonly used in high-power applications such as motor drives and inverters.