Infineon Technologies - IFS100B12N3T4B31BOSA1

IKY75N120CS6XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 880W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 331ns and built-in diode configuration. Operates b/w -40°C to 175°C temperature range.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;

IRG4BC30FD-SPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a built-in diode, 620ns turn-off time, and 100W power dissipation. Ideal for power control applications requiring fast switching capabilities in surface mount configurations.

SKM75GB12T4 by Semikron International is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.1V and can handle up to 110A of Collector Current. Ideal for POWER CONTROL applications due to its high Max Collector-Emitter Voltage of 1200V and operating temperature of 175°C.

IRG4BC40KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 42A max collector current. It has a single configuration for MOTOR CONTROL applications, offering a max power dissipation of 160W. The transistor features a package style of FLANGE MOUNT and can operate at temperatures up to 150°C.

NGTB40N120S3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 160A IC, and 1.95V VCEsat. Ideal for POWER CONTROL applications due to its high power dissipation of 454W and operating temperature range of -55 to 175°C. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.

Infineon's IRG7PH50K10DPBF is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 400W power dissipation. Ideal for high-power applications requiring fast switching with tr of 80ns and tf of 110ns. Operates up to 150°C making it suitable for industrial motor drives and renewable energy systems.

Littelfuse IXYT25N250CHV is an N-CHANNEL IGBT with 2500V VCEsat, 95A IC, and 937W power dissipation. Ideal for power control applications, it has a turn-off time of 775ns and operates b/w -55 to 175°C. Suitable for surface mount with gull wing terminals in a rectangular package shape.

IKW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, suitable for high-power operations up to 150°C.

Vincotech V23990-K230-F40-/0B/-PM is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max VCEsat of 2.2V and can handle up to 88A IC. Ideal for power control applications, this IGBT operates at temperatures up to 175°C with a collector-emitter voltage of 1200V.

AUIRGDC0250 by Infineon Technologies is an N-CHANNEL IGBT with a max fall time of 1371 ns, power dissipation of 543 W, and max operating temp of 150°C. It's ideal for high-power applications requiring a collector-emitter voltage up to 1200 V and collector current up to 141 A.

IRG4BC20UDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Gate-Emitter Voltage of 20V. It has a Nominal Turn Off Time of 320ns, making it suitable for POWER CONTROL applications requiring fast switching speeds. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals, ideal for high-power applications up to 60W at temperatures up to 150°C.

The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.

IXGH10N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 20A max collector current, and 110W max power dissipation. Ideal for power control applications, it has a turn-off time of 630ns and operates up to 150°C.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;

IKQ75N120CS6XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 150A, and Pmax of 880W. Ideal for power control applications due to its fast turn-off time (toff) of 428ns and high collector-emitter voltage of 1200V. Package style is flange mount with through-hole terminals.

STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.

FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 30 V;