Infineon Technologies - IGC109T120T8RMX1SA1

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IGC109T120T8RMX1SA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC109T120T8RMX1SA1
Description N-Channel; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.3 V; Transistor Element Material: SILICON; Maximum VCEsat: 1.74 V;
Datasheet IGC109T120T8RMX1SA1 Datasheet
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NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 1.74 V
Minimum Operating Temperature: -40 Cel
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