Infineon Technologies - IGC109T120T8RMX1SA1

IGC109T120T8RMX1SA1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IGC109T120T8RMX1SA1
Description	N-Channel; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.3 V; Transistor Element Material: SILICON; Maximum VCEsat: 1.74 V;
Datasheet	IGC109T120T8RMX1SA1 Datasheet
In Stock	859

IGC109T120T8RMX1SA1 Technical Details

NAME	DESCRIPTION
Maximum Collector-Emitter Voltage:	1200 V
Transistor Element Material:	SILICON
Maximum Gate-Emitter Threshold Voltage:	6.3 V
Maximum Operating Temperature:	175 Cel
Maximum Gate-Emitter Voltage:	20 V
Polarity or Channel Type:	N-Channel
Maximum VCEsat:	1.74 V
Minimum Operating Temperature:	-40 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
859	-	-

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