Infineon Technologies - IGC10T60Q

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IGC10T60Q by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC10T60Q
Description N-Channel; Maximum VCEsat: 2.32 V; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Gate-Emitter Threshold Voltage: 5.6 V;
Datasheet IGC10T60Q Datasheet
In Stock971
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 600 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.6 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.32 V
Minimum Operating Temperature: -40 Cel
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