Infineon Technologies - IGC28T65QEX1SA2

  1. Home
  2. Infineon Technologies - IGC28T65QEX1SA2
IGC28T65QEX1SA2 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IGC28T65QEX1SA2
Description N-Channel; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 5.6 V;
Datasheet IGC28T65QEX1SA2 Datasheet
In Stock672
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.6 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.22 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
672 - -

Popular Products

Category Top Products

IKW40N65F5FKSA1 by Infineon Technologies

IKW40N65F5FKSA1

Infineon Technologies

IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.
IXXX110N65B4H1 by IXYS Corporation

IXXX110N65B4H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 250 A; Nominal Turn On Time (ton): 65 ns;
IKW40N120H3FKSA1 by Infineon Technologies

IKW40N120H3FKSA1

Infineon Technologies

IKW40N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 414ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for high-temperature environments up to 175°C.
IXGH100N30C3 by Littelfuse

IXGH100N30C3

Littelfuse

IXGH100N30C3 by Littelfuse is an N-CHANNEL IGBT with 300V VCE, 75A IC, and 460W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.85V and fast turn-off time of 244ns. Package style is FLANGE MOUNT with a max operating temp of 150°C.
FS400R07A1E3S7BOMA1 by Infineon Technologies

FS400R07A1E3S7BOMA1

Infineon Technologies

Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
IKW75N60TFKSA1 by Infineon Technologies

IKW75N60TFKSA1

Infineon Technologies

IKW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, suitable for high-power operations up to 150°C.
IRG4PC50F-EPBF by International Rectifier

IRG4PC50F-EPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; No. of Terminals: 3;
CM500HA-34A by Powerex

CM500HA-34A

Powerex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Case Connection: ISOLATED; Terminal Position: UPPER;
APT85GR120B2 by Microchip Technology

APT85GR120B2

Microchip Technology

Microchip Technology's APT85GR120B2 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 170A max collector current. Ideal for motor control applications, it has a 445ns turn-off time, 113ns turn-on time, and can handle up to 962W power dissipation.
IRG4PH30KDPBF by International Rectifier

IRG4PH30KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 20 A; No. of Elements: 1;
FF900R12IP4DVBOSA1 by Infineon Technologies

FF900R12IP4DVBOSA1

Infineon Technologies

FF900R12IP4DVBOSA1 by Infineon is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 1300 ns turn off time, and 1200 V max collector-emitter voltage. It is used in applications requiring high power switching such as motor drives and renewable energy systems.
FS25R12W1T4BOMA1 by Infineon Technologies

FS25R12W1T4BOMA1

Infineon Technologies

FS25R12W1T4BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 505ns, making it ideal for power control applications. With a max collector current of 45A and operating temperature of up to 175°C, this IGBT is designed for high-power industrial systems.
ISL9V3040D3ST by Fairchild Semiconductor

ISL9V3040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): SMALL OUTLINE;
AFGY100T65SPD by Onsemi

AFGY100T65SPD

Onsemi

AFGY100T65SPD by Onsemi is an N-CHANNEL IGBT with 650V VCEsat and 120A IC, ideal for POWER CONTROL applications. It features a max power dissipation of 882W, operating temperature range of -55 to 175°C, and built-in diode configuration.
FP35R12KT4BOSA1 by Infineon Technologies

FP35R12KT4BOSA1

Infineon Technologies

FP35R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max voltage of 1200V, and turn-off time of 620ns. It is used in applications requiring high power switching capabilities at up to 150°C operating temperature. The transistor's silicon material and complex configuration make it suitable for various industrial uses.
CM300DY-12NF by Mitsubishi Electric

CM300DY-12NF

Mitsubishi Electric

Mitsubishi Electric's CM300DY-12NF is a N-CHANNEL IGBT with 2 elements, 7 terminals, and max IC of 300A. Ideal for power control applications with VCEsat of 2.2V, max VCE of 600V, and Pmax of 780W. Operates at up to 150°C temp with gate-emitter voltage of 20V.
IRG4PSH71UDPBF by Infineon Technologies

IRG4PSH71UDPBF

Infineon Technologies

Infineon's IRG4PSH71UDPBF is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 99A max collector current. It features a built-in diode, 330ns fall time, and 810ns turn off time. Ideal for power control applications with a max power dissipation of 350W at up to 150°C operating temperature.
IRG7PH42UDPBF by International Rectifier

IRG7PH42UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; Qualification: Not Qualified;
IFF600B12ME4PB11BPSA1 by Infineon Technologies

IFF600B12ME4PB11BPSA1

Infineon Technologies

Infineon Technologies IFF600B12ME4PB11BPSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 750ns, and ton of 250ns. Ideal for power control applications due to UL recognition and isolated case connection.
IRG4RC10SDPBF by International Rectifier

IRG4RC10SDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Collector Current (IC): 14 A; Case Connection: COLLECTOR;