Infineon Technologies - IGC99T120T8RH

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IGC99T120T8RH by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IGC99T120T8RH
Description N-Channel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum VCEsat: 1.92 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IGC99T120T8RH Datasheet
In Stock923
NAME DESCRIPTION
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-Channel
Maximum VCEsat: 1.92 V
Minimum Operating Temperature: -40 Cel
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