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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IGD01N120H2 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; Maximum Collector Current (IC): 3.2 A; No. of Terminals: 2; |
| Datasheet | IGD01N120H2 Datasheet |
| In Stock | 427 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 3.2 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Maximum Gate-Emitter Threshold Voltage: | 3.9 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 28 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 3 |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | NPN |
| JESD-609 Code: | e3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | 260 |
