Infineon Technologies - IHW30N120R3FKSA1

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IHW30N120R3FKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IHW30N120R3FKSA1
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 60 A; Terminal Finish: TIN; Maximum Gate-Emitter Voltage: 20 V;
Datasheet IHW30N120R3FKSA1 Datasheet
In Stock562
NAME DESCRIPTION
Maximum Collector Current (IC): 60 A
Maximum Power Dissipation (Abs): 349 W
Maximum Collector-Emitter Voltage: 1200 V
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
562 $2.190 $1,230.780

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