Infineon Technologies - IKA08N65F5

IKA08N65F5 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKA08N65F5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31.2 W; Maximum Collector Current (IC): 10.8 A; Nominal Turn Off Time (toff): 163 ns;
Datasheet IKA08N65F5 Datasheet
In Stock60
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 10.8 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Surface Mount: NO
Nominal Turn Off Time (toff): 163 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 31.2 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 15 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.1 V
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Pricing (USD)

Qty. Unit Price Ext. Price
60 $3.060 $183.600

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