IKB03N120H2XT by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IKB03N120H2XT
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 9.6 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	IKB03N120H2XT Datasheet
In Stock	203

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	9.6 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Nominal Turn Off Time (toff):	403 ns
No. of Terminals:	3
Maximum Collector-Emitter Voltage:	1200 V
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	16.1 ns
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	HIGH SPEED
Case Connection:	COLLECTOR
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
203	-	-

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