Infineon Technologies - IKB20N65EH5ATMA1

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IKB20N65EH5ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKB20N65EH5ATMA1
Description N-Channel; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 38 A; Maximum VCEsat: 2.1 V; JESD-609 Code: e3; Transistor Element Material: SILICON;
Datasheet IKB20N65EH5ATMA1 Datasheet
In Stock233
NAME DESCRIPTION
Maximum Collector Current (IC): 38 A
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 4.8 V
Polarity or Channel Type: N-Channel
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 187 ns
Maximum Power Dissipation (Abs): 125 W
Maximum Collector-Emitter Voltage: 650 V
Nominal Turn On Time (ton): 28 ns
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.1 V
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
233 $1.300 $302.900

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