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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IKB40N65ES5ATMA1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 79 A; JEDEC-95 Code: TO-263AB; |
Datasheet | IKB40N65ES5ATMA1 Datasheet |
In Stock | 673 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 79 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 4.8 V |
Surface Mount: | YES |
Nominal Turn Off Time (toff): | 204 ns |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 230 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 36 ns |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | COLLECTOR |
Moisture Sensitivity Level (MSL): | 1 |
JEDEC-95 Code: | TO-263AB |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Maximum Collector-Emitter Voltage: | 650 V |
Maximum Gate-Emitter Voltage: | 20 V |
Maximum VCEsat: | 1.7 V |