Infineon Technologies - IKD06N60RF

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IKD06N60RF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IKD06N60RF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Terminal Position: SINGLE;
Datasheet IKD06N60RF Datasheet
In Stock960
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 12 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Surface Mount: YES
Terminal Finish: TIN
Nominal Turn Off Time (toff): 150 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 100 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 16 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.5 V
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Pricing (USD)

Qty. Unit Price Ext. Price
960 $1.220 $1,171.200

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