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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IKFW75N60ETXKSA1 |
Description | N-Channel; Maximum Power Dissipation (Abs): 178 W; Maximum Collector Current (IC): 80 A; Nominal Turn Off Time (toff): 417 ns; Nominal Turn On Time (ton): 79 ns; Transistor Element Material: SILICON; |
Datasheet | IKFW75N60ETXKSA1 Datasheet |
In Stock | 61 |
NAME | DESCRIPTION |
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Maximum Collector Current (IC): | 80 A |
Transistor Element Material: | SILICON |
Maximum Gate-Emitter Threshold Voltage: | 5.7 V |
Polarity or Channel Type: | N-Channel |
Terminal Finish: | TIN |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -40 Cel |
Nominal Turn Off Time (toff): | 417 ns |
Maximum Power Dissipation (Abs): | 178 W |
Maximum Collector-Emitter Voltage: | 600 V |
Nominal Turn On Time (ton): | 79 ns |
Maximum Operating Temperature: | 175 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Case Connection: | ISOLATED |
Maximum VCEsat: | 2 V |