Infineon Technologies - IKP10N60THKSA1

  1. Home
  2. Infineon Technologies - IKP10N60THKSA1
IKP10N60THKSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IKP10N60THKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 600 V; Case Connection: COLLECTOR;
Datasheet IKP10N60THKSA1 Datasheet
In Stock869
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 20 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 296 ns
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 21 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
869 - -

Popular Products

Category Top Products

FS150R12KT4B11BOSA1 by Infineon Technologies

FS150R12KT4B11BOSA1

Infineon Technologies

FS150R12KT4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and a nominal turn-off time of 605ns. This power control transistor is designed for applications requiring fast switching speeds in bridge configurations.
IXXH30N65B4 by Littelfuse

IXXH30N65B4

Littelfuse

IXXH30N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 230W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 206ns and low VCEsat of 2.1V. The package style is FLANGE MOUNT with a RECTANGULAR shape and THROUGH-HOLE terminals.
MIXA60W1200TED by IXYS Corporation

MIXA60W1200TED

IXYS Corporation

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 85 A; Terminal Form: UNSPECIFIED;
IXYH50N120C3D1 by Littelfuse

IXYH50N120C3D1

Littelfuse

Littelfuse IXYH50N120C3D1 is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 625W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 150 °C.
FF225R12MS4BOSA1 by Infineon Technologies

FF225R12MS4BOSA1

Infineon Technologies

Infineon's FF225R12MS4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Featuring 1200V max collector-emitter voltage, it has a 590ns turn off time and 275A max collector current. Ideal for applications requiring high power switching in industrial settings.
STGW40N120KD by STMicroelectronics

STGW40N120KD

STMicroelectronics

STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.
STGWT20H65FB by STMicroelectronics

STGWT20H65FB

STMicroelectronics

STGWT20H65FB by STMicroelectronics is an N-CHANNEL IGBT with 168W power dissipation, 650V collector-emitter voltage, and 40A collector current. It operates up to 175°C and is ideal for high-power applications in various industries.
FGL60N100BNTDTU by Fairchild Semiconductor

FGL60N100BNTDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
IRG7PH42UD2-EP by International Rectifier

IRG7PH42UD2-EP

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Terminals: 3; Case Connection: COLLECTOR;
FGA25N120ANTDTU by Rochester Electronics

FGA25N120ANTDTU

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT;
IHW25N120E1XKSA1 by Infineon Technologies

IHW25N120E1XKSA1

Infineon Technologies

IHW25N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and collector current of 50A. It has a turn off time of 1677ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
FGH40N65UFDTU_F085 by Onsemi

FGH40N65UFDTU_F085

Onsemi

FGH40N65UFDTU_F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 80A, and Pmax of 290W. Ideal for power control applications, it operates up to 150°C with a VCE max of 650V.
SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
MMIX4G20N250 by IXYS Corporation

MMIX4G20N250

IXYS Corporation

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 4;
FPF1C2P5MF07AM by Onsemi

FPF1C2P5MF07AM

Onsemi

FPF1C2P5MF07AM by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 1.6V, it has a Max Collector-Emitter Voltage of 620V and can handle up to 39A of Max Collector Current (IC). Ideal for high-power systems requiring efficient power management.
IRGR4045DPBF by International Rectifier

IRGR4045DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Transistor Application: POWER CONTROL;
IRGP4063DPBF by Infineon Technologies

IRGP4063DPBF

Infineon Technologies

IRGP4063DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 96A. It is designed for POWER CONTROL applications, featuring a Max Power Dissipation of 330W and a Nominal Turn Off Time of 210ns. Ideal for high-power switching in various electronic systems.
HGTP10N120BN by Harris Semiconductor

HGTP10N120BN

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;
SKM400GB12T4 by Semikron International

SKM400GB12T4

Semikron International

Semikron International's SKM400GB12T4 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.05V and Max Collector Current of 610A, it operates at up to 175°C. With a Max Collector-Emitter Voltage of 1200V, this UL RECOGNIZED transistor is designed for high-power systems.
IKW25N120T2FKSA1 by Infineon Technologies

IKW25N120T2FKSA1

Infineon Technologies

IKW25N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 504ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and SILICON transistor element material. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.