IMZA120R040M1HXKSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IMZA120R040M1HXKSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; No. of Elements: 1; No. of Terminals: 4;
Datasheet	IMZA120R040M1HXKSA1 Datasheet
In Stock	191

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	55 A
Maximum Pulsed Drain Current (IDM):	117 A
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	227 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.0615 ohm
Avalanche Energy Rating (EAS):	339 mJ
Maximum Feedback Capacitance (Crss):	11 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1200 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
191	-	-

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