Infineon Technologies - IPA050N10NM5SXKSA1

  1. Home
  2. Infineon Technologies - IPA050N10NM5SXKSA1
IPA050N10NM5SXKSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IPA050N10NM5SXKSA1
Description Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet IPA050N10NM5SXKSA1 Datasheet
In Stock696
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
696 - -

Popular Products

Category Top Products

IRFP450PBF by Vishay Siliconix

IRFP450PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
FDD6637 by Fairchild Semiconductor

FDD6637

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
2N7002W by Diodes Incorporated

2N7002W

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e0; No. of Elements: 1;
IRF740SPBF by Vishay Intertechnology

IRF740SPBF

Vishay Intertechnology

Vishay Intertechnology's IRF740SPBF is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 520mJ EAS, and 0.55 ohm RDS(on). With a max power dissipation of 125W and operating temp of 150°C, it offers reliable performance in various electronic systems.
IRFH5015TRPBF by Infineon Technologies

IRFH5015TRPBF

Infineon Technologies

IRFH5015TRPBF by Infineon Technologies is a N-CHANNEL FET with 150V DS Breakdown Voltage and 220A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.031 ohm RDS(on), and 250W Pdiss. Operating in ENHANCEMENT MODE, this transistor has a max temp of 150°C and matte tin finish.
IRF7425TRPBF-1 by Infineon Technologies

IRF7425TRPBF-1

Infineon Technologies

IRF7425TRPBF-1 by Infineon is a P-channel Power FET with 20V DS breakdown voltage, 15A max drain current, and 0.0082 ohm RDS(on). It's used in power management applications due to its small outline package, 60A pulsed drain current, and -55 to +150°C operating temperature range.
FDPF10N60NZ by Fairchild Semiconductor

FDPF10N60NZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
IRF7749L1TRPBF by Infineon Technologies

IRF7749L1TRPBF

Infineon Technologies

Infineon's IRF7749L1TRPBF is a N-CHANNEL FET with 375A ID, 125W power dissipation, and 175°C max temp. Ideal for high-power applications requiring single configuration surface mount technology.
BSC060N10NS3G by Infineon Technologies

BSC060N10NS3G

Infineon Technologies

BSC060N10NS3G by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 360A IDM, and 0.006 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. This PLASTIC/EPOXY transistor has a small outline package style and can withstand temperatures up to 150°C.
IRFP460 by International Rectifier

IRFP460

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-247AC;
ZVN2110GTA by Diodes Incorporated

ZVN2110GTA

Diodes Incorporated

ZVN2110GTA by Diodes Inc. is a N-CHANNEL power FET with 100V DS breakdown voltage, 6A IDM, and 4 ohm RDS(on). It is used for switching applications in small outline packages.
IRF840PBF by Vishay Intertechnology

IRF840PBF

Vishay Intertechnology

Vishay Intertechnology's IRF840PBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 32A IDM and 510mJ EAS ratings. The transistor operates in ENHANCEMENT MODE with 0.85 ohm RDS(on) and can handle up to 125W power dissipation.
BSC016N06NSATMA1 by Infineon Technologies

BSC016N06NSATMA1

Infineon Technologies

Infineon's BSC016N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 400A and EAS of 380mJ, ensuring efficient operation. With a drain-source on resistance of 0.0016 ohm and operating temperature up to 150°C, it offers high performance in a small outline package.
IRFP460 by STMicroelectronics

IRFP460

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
BSC030P03NS3GAUMA1 by Infineon Technologies

BSC030P03NS3GAUMA1

Infineon Technologies

BSC030P03NS3GAUMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 200A IDM, and 0.0046 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. The transistor has a small outline package style and can withstand temperatures from -55 to 150 °C.
BSZ086P03NS3EGATMA1 by Infineon Technologies

BSZ086P03NS3EGATMA1

Infineon Technologies

Infineon BSZ086P03NS3EGATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 160A IDM, and 0.0134 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features METAL-OXIDE SEMICONDUCTOR tech and operates up to 150°C.
IRF7404TRPBF by International Rectifier

IRF7404TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002PS,115 by NXP Semiconductors

2N7002PS,115

NXP Semiconductors

2N7002PS,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.32A Max Drain Current and 0.99W Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
SI7611DN-T1-GE3 by Vishay Intertechnology

SI7611DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7611DN-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 40V DS breakdown voltage, 20A pulsed drain current, and 0.025 ohm max drain-source resistance. Ideal for high-power applications requiring efficient switching with a max power dissipation of 39W in a small outline package.
IRFP460PBF by Vishay Siliconix

IRFP460PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .27 ohm; Avalanche Energy Rating (EAS): 960 mJ;