Infineon Technologies - IPA65R650CEXKSA1

IPA65R650CEXKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPA65R650CEXKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Minimum DS Breakdown Voltage: 650 V; Maximum Drain-Source On Resistance: .65 ohm;
Datasheet IPA65R650CEXKSA1 Datasheet
In Stock771
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10.1 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 28 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .65 ohm
Avalanche Energy Rating (EAS): 142 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 650 V
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Pricing (USD)

Qty. Unit Price Ext. Price
771 $0.307 $236.697

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