Infineon Technologies - IPB011N04NGXT

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IPB011N04NGXT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB011N04NGXT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet IPB011N04NGXT Datasheet
In Stock1,656
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 1260 A
Surface Mount: YES
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0011 ohm
Avalanche Energy Rating (EAS): 610 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Additional Features: AVALANCHE RATED, ULTRA-LOW RESISTANCE
Peak Reflow Temperature (C): NOT SPECIFIED
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