IPB015N08N5ATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IPB015N08N5ATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 180 A; Maximum Drain-Source On Resistance: .0015 ohm; JEDEC-95 Code: TO-263;
Datasheet	IPB015N08N5ATMA1 Datasheet
In Stock	1,945

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	180 A
Maximum Pulsed Drain Current (IDM):	720 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0015 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	1230 mJ
Other Names:	IPB015N08N5ATMA1TR IPB015N08N5ATMA1CT IPB015N08N5ATMA1DKR SP001226034 IPB015N08N5ATMA1-ND
JEDEC-95 Code:	TO-263
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	80 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,945	-	-

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