Infineon Technologies - IPB019N08N3GATMA1

IPB019N08N3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB019N08N3GATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
Datasheet IPB019N08N3GATMA1 Datasheet
In Stock20,036
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 720 A
Surface Mount: YES
No. of Terminals: 6
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0019 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 1430 mJ
Other Names: IPB019N08N3GATMA1CT
IPB019N08N3 G-ND
IPB019N08N3 G
Q4136793
IPB019N08N3 GCT
IPB019N08N3 GTR-ND
IPB019N08N3GATMA1TR
SP000444110
2832-IPB019N08N3GATMA1-TR
IPB019N08N3G
IPB019N08N3 GCT-ND
IPB019N08N3 GDKR-ND
IPB019N08N3 GDKR
IPB019N08N3GATMA1DKR
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
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