Infineon Technologies - IPB100N06S205ATMA4

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IPB100N06S205ATMA4 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB100N06S205ATMA4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 400 A; Moisture Sensitivity Level (MSL): 1;
Datasheet IPB100N06S205ATMA4 Datasheet
In Stock23,383
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 810 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 100 A
JEDEC-95 Code: TO-263AB
Maximum Pulsed Drain Current (IDM): 400 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 2
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0047 ohm
Moisture Sensitivity Level (MSL): 1
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