Infineon Technologies - IPB100N10S305ATMA1

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IPB100N10S305ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB100N10S305ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 400 A; No. of Terminals: 2; Moisture Sensitivity Level (MSL): 1;
Datasheet IPB100N10S305ATMA1 Datasheet
In Stock2,316
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0048 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 1445 mJ
Other Names: IPB100N10S305ATMA1DKR
SP000261243
IPB100N10S305ATMA1CT
IPB100N10S3-05
IPB100N10S3-05CT
IPB100N10S3-05DKR-ND
IPB100N10S3-05-ND
2156-IPB100N10S305ATMA1
IPB100N10S3-05TR
IPB100N10S3-05CT-ND
IPB100N10S3-05DKR
IPB100N10S305ATMA1TR
IFEINFIPB100N10S305ATMA1
IPB100N10S3-05TR-ND
IPB100N10S305
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Peak Reflow Temperature (C): 245
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