Infineon Technologies - IPB100N12S3-05

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IPB100N12S3-05 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB100N12S3-05
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Reference Standard: AEC-Q101;
Datasheet IPB100N12S3-05 Datasheet
In Stock746
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0048 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 1445 mJ
Maximum Feedback Capacitance (Crss): 330 pF
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 120 V
Reference Standard: AEC-Q101
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Pricing (USD)

Qty. Unit Price Ext. Price
746 $4.298 $3,206.308

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