Infineon Technologies - IPB45P03P4L11XT

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IPB45P03P4L11XT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB45P03P4L11XT
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 110 mJ; Additional Features: LOGIC LEVEL COMPATIBLE; JEDEC-95 Code: TO-263AB;
Datasheet IPB45P03P4L11XT Datasheet
In Stock805
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 110 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 45 A
JEDEC-95 Code: TO-263AB
Maximum Pulsed Drain Current (IDM): 180 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 30 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0111 ohm
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