Infineon Technologies - IPB60R125CPATMA1

  1. Home
  2. Infineon Technologies - IPB60R125CPATMA1
IPB60R125CPATMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IPB60R125CPATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 600 V; Maximum Drain Current (ID): 25 A; Transistor Application: SWITCHING;
Datasheet IPB60R125CPATMA1 Datasheet
In Stock7,087
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 82 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .125 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 708 mJ
Other Names: IPB60R125CPTR-ND
IPB60R125CPCT
IPB60R125CPDKR
IPB60R125CPATMA1TR
IPB60R125CPATMA1DKR
IPB60R125CPDKR-ND
IPB60R125CP
IPB60R125CPTR
SP000297368
IPB60R125CPATMA1CT
2156-IPB60R125CPATMA1-448
IPB60R125CP-ND
IPB60R125CPCT-ND
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
7,087 - -

Popular Products

Category Top Products

IRFP4568PBF by Infineon Technologies

IRFP4568PBF

Infineon Technologies

Infineon's IRFP4568PBF is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 684A IDM and 0.0059 ohm RDS(on), it operates in ENHANCEMENT MODE up to 175°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in high-power circuits.
IRFP460APBF by Vishay Siliconix

IRFP460APBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING;
IRF530NPBF by International Rectifier

IRF530NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 17 A;
FQD17P06TM by Fairchild Semiconductor

FQD17P06TM

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; JESD-609 Code: e3; Case Connection: DRAIN;
IPB64N25S320ATMA1 by Infineon Technologies

IPB64N25S320ATMA1

Infineon Technologies

Infineon's IPB64N25S320ATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 64A max drain current, and 0.02 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 256A IDM rating.
DMP3099L-7 by Diodes Incorporated

DMP3099L-7

Diodes Incorporated

DMP3099L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.065 ohm. Suitable for surface mount designs with small outline package style.
IRLML2030TRPBF by Infineon Technologies

IRLML2030TRPBF

Infineon Technologies

IRLML2030TRPBF by Infineon is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.1 ohm Drain-Source On Resistance and 12pF Feedback Capacitance.
FDS8984_F085 by Fairchild Semiconductor

FDS8984_F085

Fairchild Semiconductor

FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
BSS123 by North American Philips Discrete Products Div

BSS123

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SUD50P06-15L-E3 by Vishay Intertechnology

SUD50P06-15L-E3

Vishay Intertechnology

Vishay Intertechnology's SUD50P06-15L-E3 is a P-channel power FET with 60V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, 0.015 ohm max on-resistance, and operates in enhancement mode. Suitable for surface mount with Gull Wing terminals, it has a max power dissipation of 136W and can withstand up to 175°C operating temperature.
FDMS86252L by Fairchild Semiconductor

FDMS86252L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; No. of Elements: 1;
NDT3055L by Fairchild Semiconductor

NDT3055L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 25 A;
FQD12N20LTM-F085 by Onsemi

FQD12N20LTM-F085

Onsemi

FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
FQD12N20LTM_F085 by Fairchild Semiconductor

FQD12N20LTM_F085

Fairchild Semiconductor

FQD12N20LTM_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 55W.
IRF840SPBF by Vishay Siliconix

IRF840SPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): 8 A; Qualification: Not Qualified;
BBS3002-DL-1E by Onsemi

BBS3002-DL-1E

Onsemi

BBS3002-DL-1E by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 400A IDM, and 0.009 ohm RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for surface mount designs in various electronic systems requiring efficient power control.
FDS4559_NL by Fairchild Semiconductor

FDS4559_NL

Fairchild Semiconductor

FDS4559_NL by Fairchild Semiconductor is a Power FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 4.5A, on-resistance of 0.055 ohm, and operates at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals in SMALL OUTLINE style.
FDMS86163P by Onsemi

FDMS86163P

Onsemi

FDMS86163P by Onsemi is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 486mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and -55 to 150 °C temperature range, it offers high performance in power management systems.
JANTX2N6796U by Microsemi

JANTX2N6796U

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ZXMP6A17E6TA by Zetex Plc

ZXMP6A17E6TA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;