Infineon Technologies - IPB65R660CFDAATMA1

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IPB65R660CFDAATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB65R660CFDAATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 650 V;
Datasheet IPB65R660CFDAATMA1 Datasheet
In Stock1,645
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 17 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .66 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 115 mJ
Other Names: 448-IPB65R660CFDAATMA1TR
448-IPB65R660CFDAATMA1DKR
IPB65R660CFDAATMA1-ND
2156-IPB65R660CFDAATMA1
448-IPB65R660CFDAATMA1CT
SP000875794
INFINFIPB65R660CFDAATMA1
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 650 V
Reference Standard: AEC-Q101
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