Infineon Technologies - IPB70N04S4-06

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IPB70N04S4-06 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPB70N04S4-06
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IPB70N04S4-06 Datasheet
In Stock198
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 70 A
Maximum Pulsed Drain Current (IDM): 280 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 58 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .0062 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 72 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 70 A
Peak Reflow Temperature (C): 245
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Pricing (USD)

Qty. Unit Price Ext. Price
198 $2.030 $401.940

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