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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IPB80N08S4-06 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; JEDEC-95 Code: TO-263AB; No. of Elements: 1; |
Datasheet | IPB80N08S4-06 Datasheet |
In Stock | 570 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 80 A |
Maximum Pulsed Drain Current (IDM): | 320 A |
Surface Mount: | YES |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 150 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0055 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 270 mJ |
Maximum Feedback Capacitance (Crss): | 150 pF |
JEDEC-95 Code: | TO-263AB |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 80 V |
Reference Standard: | AEC-Q101 |